Boltzmann equation approach for transport in systems subject to microwave irradiation
Department of Physics, Gakushuin University, 1-5-1
Mejiro, Toshima-ku, Tokyo 171, Japan
Accepted: 18 January 1996
We calculate the electronic transport properties of a system which is irradiated by a homogeneous microwave field. Within a Boltzmann equation approach, a general expression for the conductivity tensor is derived and evaluated for a quasi–one-dimensional ballistic quantum wire and a two-dimensional system with impurity scattering. For the latter, deviations from the Drude result are predicted for the conductivity tensor. This should be observable in systems where the scattering rate depends noticeably on the Fermi energy. The deviations are calculated explicitly for the case of a 2d silicon layer, where they strongly depend on the microwave polarization and the Fermi energy.
PACS: 72.10.Bg – General formulation of transport theory / 72.15.Lh – Relaxation times and mean free paths / 72.30.+q – High-frequency effects; plasma effects
© EDP Sciences, 1996