Europhys. Lett, 38 (6), pp. 447-452 (1997)
Transition between dynamic regimes in the sputter ablation of Ge(001)
D.-M. Smilgies , P. J. Eng , E. Landemark and M. Nielsen
Risø National Laboratory, -
DK-4000, Roskilde, Denmark
CARS, University of Chicago - Chicago IL 60637, USA
(received 6 November 1996; accepted in final form 17 April 1997)
PACS. 64.60Ht - Dynamic critical phenomena.
PACS. 61.10 - X-ray diffraction and scattering.
PACS. 68.35Bs - Surface structure and topography.
Abstract:We have studied the dynamic behavior of the Ge(001) surface during sputtering using in situ, real-time synchrotron X-ray diffraction. Two dynamic regimes were found which are characterized by kinetic roughening exponents of 0.1 and 0.4, respectively. We observed an abrupt transition of the system between these two dynamic regimes both as a function of temperature and ion current. From the boundary between the regimes we derive an activation energy of the relevant diffusion process of 1.1 eV.
Copyright EDP Sciences