Microscopic origin of the magnetocrystalline anisotropy energy of ferromagnetic-semiconductor multilayers
Institut für Physikalische Chemie, Universität München
Butenandtstr. 5-13, D-81377 München, Germany
2 MPI für Physik Komplexer Systeme Nöthnitzerstr. 38, D-01187 Dresden, Germany
Accepted: 22 May 2000
Results of a detailed study of the spin-orbit–induced electronic magnetocrystalline anisotropy energy (MAE) of Fe/GaAs (001) ferromagnetic-semiconductor multilayers using the first-principles spin-polarized relativistic (SPR) linear-muffin-tin-orbital (LMTO) method are presented. For a further analysis, the spin-orbit–induced orbital moments have been calculated in a spin-resolved way, in addition. This allowed to check the relationship between the MAE and the orbital moments suggested by Bruno and van der Laan. According to that relationship, the microscopic origin of the electronic MAE of these multilayers is mainly due (~ 80%) to a delicate rearrangement of the occupations of certain 3d minority spin levels at the interface Fe layers.
PACS: 75.30.Gw – Magnetic anisotropy / 75.70.-i – Magnetic films and multilayers / 75.70.Cn – Interfacial magnetic properties (multilayers, magnetic quantum wells, super lattices, magnetic heterostructures)
© EDP Sciences, 2000