Effect of oxygen vacancy concentration on domain switching of Bi3.15Nd0.85Ti3O12
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education,
Xiangtan University - Hunan Xiangtan 411105, China
2 Faculty of Materials, Optoelectronics and Physics, Xiangtan University - Hunan Xiangtan 411105, China
Accepted: 28 March 2011
Bi3.15Nd0.85Ti3O12 (BNT) thin films with different oxygen vacancy concentrations were prepared by annealing in air and nitrogen atmospheres. The effects of oxygen vacancy concentration on microstructures and domain switching of BNT thin films were investigated. It is found that the film annealed in air atmosphere possesses higher crystallinity, larger grain size, better electrical properties and more complete domain switching than those of the film annealed in nitrogen atmosphere. The results demonstrate that oxygen vacancies play a significant role in domain switching and in the electrical properties of BNT films, and low oxygen vacancy concentration is propitious to domain switching.
PACS: 77.80.Fm – Switching phenomena / 77.80.Dj – Domain structure; hysteresis / 77.84.-s – Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
© EPLA, 2011