Large anisotropic magnetoresistance across the Schottky interface in all oxide ferromagnet/semiconductor heterostructures
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University - Tianjin 300072, PRC
Accepted: 26 April 2011
Over 80% fourfold symmetric anisotropic magnetoresistance (AMR) across the interface is observed in epitaxial Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures, while the twofold symmetric AMR across the interface in epitaxial Fe3O4 (111)/ZnO (0001) heterostructures is rather small. The large AMR across the interface is considered to be induced by the assistance of magnetocrystalline anisotropic energy for the transport electrons while the applied voltage bias is near the height of Schottky barrier, which is further verified by the fact that a larger critical current is needed for the maximum AMR in the Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures with heavier Nb-doping.
PACS: 75.47.-m – Magnetotransport phenomena; materials for magnetotransport / 81.15.Cd – Deposition by sputtering / 75.30.Gw – Magnetic anisotropy
© EPLA, 2011