Spatial “rocking” in broad-area semiconductor lasers
Weierstrass Institute - Mohrenstr. 39, 10117 Berlin, Germany, EU
2 Departament de Física i Enginyeria Nuclear, Universitat Politècnica de Catalunya - Colom 11, 08222 Terrassa, Barcelona, Spain, EU
3 Institució Catalana de Reserca i Estudis Avançats (ICREA) - Pg. Lluis Companys, 23, 08010, Barcelona, Spain, EU
Accepted: 18 May 2011
The spatial “rocking” is a dynamical effect converting a phase-invariant oscillatory system into a phase-bistable one, where the average phase of the system locks to one of two values differing by π. We demonstrate theoretically the spatial rocking in experimentally accessible and practically relevant systems —the broad-area semiconductor lasers operating well above the threshold. By numerical integration of the laser model equations we show the phase bistability of the optical fields and explore the bistability area in parameter space. We also predict the spatial patterns, such as phase domain walls and phase solitons, which are characteristic for the phase-bistable spatially extended pattern-forming systems.
PACS: 42.55.Px – Semiconductor lasers; laser diodes / 42.65.Pc – Optical bistability, multistability, and switching, including local field effects / 42.60.Jf – Beam characteristics: profile, intensity, and power; spatial pattern formation
© EPLA, 2011