Correlation between Raman scattering and conductance in a molecular junction
Department of Chemistry and Biochemistry, University of California at San Diego - La Jolla, CA 92093, USA
Accepted: 23 May 2011
Using a generic model of a current-carrying molecular junction we discuss, for the first time, correlations between Raman flux and electrical conductance. A mechanism alternative to molecular motion is proposed for these experimentally detected correlations. Numerical simulations based on realistic estimates of molecular junction parameters suggest that the effect should be observable.
PACS: 73.63.-b – Electronic transport in nanoscale materials and structures / 85.35.-p – Nanoelectronic devices / 85.65.+h – Molecular electronic devices
© EPLA, 2011