Grain boundary resistivities of polycrystalline Au films
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science Beijing 100080, China
2 Center for Nanophase Materials Sciences, Oak Ridge National Laboratory - Oak Ridge, TN 37831-6493, USA
3 Computer Science and Mathematics Division, Oak Ridge National Laboratory - Oak Ridge, TN 37831-6493, USA
Accepted: 22 August 2011
The grain boundary resistivities of polycrystalline Au films are determined without any adjustable parameters by comparing the changes in residual resistivity and average grain size before and after annealing. Surface roughness contribution to the total residual resistivity, which scales with the average grain size differently than the grain boundary contribution, is found to be negligible. The measured resistivity data yield a grain boundary reflection coefficient R that is dependent on the film thickness and varies from 0.28 to 0.4.
PACS: 73.50.-h – Electronic transport phenomena in thin films / 73.63.-b – Electronic transport in nanoscale materials and structures
© EPLA, 2011