Thermally activated conductivity in gapped bilayer graphene
Institute for Theoretical Physics, University of Regensburg - D-93040 Regensburg, Germany, EU and Department of Physics, University of Texas - 1 University Station C1600, Austin, 78712 T, USA
Accepted: 24 April 2012
This is a theoretical study of electron transport in gated bilayer graphene —a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates the thermally activated transport. The mechanism proposed can also lead to the non-monotonic conductivity vs. temperature dependence at a band gap size of the order of 10 meV. The effect can be observed in gapped bilayer graphene sandwiched in boron nitride where the electron-hole puddles and flexural phonons are strongly suppressed.
PACS: 72.80.Vp – Electronic transport in graphene / 72.10.Fk – Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
© EPLA, 2012