Raman study on thermal conductivity of oxide-coated silicon nanowires
1 Department of Electronic Engineering, Key Laboratory of Polar Materials and Devices (Ministry of Education of China), East China Normal University - 500 Dongchuan Road, Shanghai 200241, China
2 School of Electronics and Information, Nantong University - 9 Seyuan Road, Nantong 226019, China
Received: 16 August 2012
Accepted: 14 September 2012
The thermal conductivity of amorphous-oxide-coated silicon nanowires (SiNWs) was investigated based on Raman spectroscopy. Currently, it was complex and troublesome to measure the thermal conductivity of SiNWs. Therefore, to develop a new measurement technique for thermal characterization was necessary and urgent. SiNWs could be seen as a core/shell structure during inevitable air exposure. The thermal conductivity of core/shell SiNWs (∼0.44 Wm−1 K−1) was found to be 100-fold smaller than that of bulk Si at room temperature by Raman spectroscopy. Hence, Raman spectroscopy has become one of the preferred choices to characterize and investigate nanoscale materials.
PACS: 44.10.+i – Heat conduction / 78.67.-n – Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 61.46.Km – Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
© EPLA, 2012