Effects of defects near source or drain contacts of carbon nanotube transistors
1 Physics Department, Science Faculty, Ningbo University - Fenghua Road 818, Ningbo 315211, PRC
2 Information Faculty, Ningbo City College of Vocational Technology - Xuefu Road 9, Ningbo 315100, PRC
Received: 2 July 2012
Accepted: 12 November 2012
We calculate the amplitude of the random-telegraph-signal (RTS) noise due to a single charged defect in a long-channel p-type carbon nanotube field-effect transistor, using the nonequilibrium Green function method in a tight-binding approximation. We find that the amplitude of the RTS noise caused by a positive charge close to the source (or drain) contact increases with the applied gate voltage and drain voltage. A positive charge located at the nanotube-oxide interface and close to the source (or drain) contact may cause a large RTS noise of about 50% in the on-state.
PACS: 73.63.Fg – Nanotubes / 85.35.Kt – Nanotube devices / 85.30.Tv – Field effect devices
© EPLA, 2012