The mechanism of the maximum photovoltage in perovskite oxide heterostructures with the critical thickness
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China
Received: 23 January 2013
Accepted: 23 April 2013
A calculation based on the one-dimensional time-dependent drift diffusion model was carried out in order to study the mechanism of the maximum photovoltage obtained in perovskite oxide heterostructures. We found that the critical thickness of the thin films with which the maximum photovoltage was obtained depends on the width of the depletion region, the diffusion length of the minority carriers, and the light absorption coefficient in the films. The results reveal some physical insights in the maximum photovoltage and should be useful in designing the perovskite oxide heterostructures to improve the photovoltaic effect.
PACS: 73.50.Pz – Photoconduction and photovoltaic effects / 73.40.Lq – Other semiconductor-to-semiconductor contacts,
© EPLA, 2013