Thermal conduction in InxGa1−xN film
Unit on Nano Science and Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre For Basic Sciences - Block JD, Sector III, Saltlake, Kolkata 700098, India
Received: 25 April 2014
Accepted: 9 August 2014
We report on theoretical investigation of the thermal conductivity of InxGa1−xN films over a wide range of temperature by using both Debye's model and Callaway's one. As the In content increases, the thermal conductivity decreases until 50% In content and beyond that it increases with the increase in In content with a sudden jump near 90% In content. The mass disorder scattering contribution is nearly 100% near the thermal conductivity peak and decreases very slowly with the increase in temperature. The mass disorder scattering has a very significant contribution both in the thermal conductivity peak region and in the higher temperature region. The boundary scattering contribution is significant in the low temperature region and the N-drift scattering contribution increases with the increase in temperature.
PACS: 66.70.Df – Metals, alloys, and semiconductors / 63.20.kg – Phonon-phonon interactions / 63.20.kp – Phonon-defect interactions
© EPLA, 2014