Metamorphosis of the transistor into a laser
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign Urbana, IL 61801, USA
Received: 12 December 2014
Accepted: 12 December 2014
Based on the invention and operation of the transistor, the alloy diode laser, the quantum-well diode laser and the high-speed heterojunction bipolar transistor (HBT), we have invented and realized now a transistor laser (TL). The transistor laser is a three-terminal technology providing coupling and the coherent light emission in the transistor. The quantum-well (QW) heterojunction bipolar transistor laser, inherently a fast switching device, operates by transporting a small minority base charge density over a nanoscale base thickness in picoseconds. The TL, owing to its fast recombination speed, its unique three-terminal configuration, and complementary nature of its optical and electrical collector output signals, enables resonance-free base current and collector voltage modulation. It is a compact source of electro-optical applications such as nonlinear signal mixing, frequency multiplication, negative feedback, and optoelectronics logic gates.
PACS: 85.30.Pq – Bipolar transistors / 42.55.Px – Semiconductor lasers; laser diodes / 85.35.Be – Quantum well devices (quantum dots, quantum wires, etc.)
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