Temperature effect on (2 + 1) experimental Kardar-Parisi-Zhang growth
1 Departamento de Física, Universidade Federal de Viçosa - 36570-000, Viçosa, MG, Brazil
2 Instituto Federal do Espírito Santo - 29520-000, Alegre, ES, Brazil
Received: 19 November 2014
Accepted: 5 February 2015
We report on the effect of substrate temperature (T) on both local structure and long-wavelength fluctuations of polycrystalline CdTe thin films deposited on Si(001). A strong T-dependent mound evolution is observed and explained in terms of the energy barrier to inter-grain diffusion at grain boundaries, as corroborated by Monte Carlo simulations. This leads to transitions from uncorrelated growth to a crossover from random-to-correlated growth and transient anomalous scaling as T increases. Due to these finite-time effects, we were not able to determine the universality class of the system through the critical exponents. Nevertheless, we demonstrate that this can be circumvented by analyzing height, roughness and maximal height distributions, which allow us to prove that CdTe grows asymptotically according to the Kardar-Parisi-Zhang (KPZ) equation in a broad range of T. More important, one finds positive (negative) velocity excess in the growth at low (high) T, indicating that it is possible to control the KPZ non-linearity by adjusting the temperature.
PACS: 68.43.Hn – Structure of assemblies of adsorbates (two- and three-dimensional clustering) / 81.15.Aa – Theory and models of film growth / 05.40.-a – Fluctuation phenomena, random processes, noise, and Brownian motion
© EPLA, 2015