When hole extraction determines charge transfer across metal-organic-metal structure
1 Institute of Physics, Carl von Ossietzky University of Oldenburg - D-26111 Oldenburg, Germany
2 Institute of Physics, Albert-Ludwig University of Freiburg - D-79104 Freiburg, Germany
Received: 3 November 2015
Accepted: 2 March 2016
We examined the charge transfer in metal-organic-metal structure, where the contact resistance of the extracting interface is larger than the resistance of the organic crystalline material and the resistance of the injecting interface. If direct tunneling (low voltage) and Fowler-Nordheim tunnelling (high voltage) across both interfaces take place, part of the injected holes remains located in the organic crystal because of the blocking action of the extracting interface, but not because of traps within the organic crystalline material (which was negligible). If Fowler-Nordheim tunneling across the injecting interface and direct tunneling across the extracting interface take place for high voltages, the latter leads to the deviation of the total current-voltage characteristic from the power law with to Ohm's law with .
PACS: 73.40.Cg – Contact resistance, contact potential / 73.40.Sx – Metal-semiconductor-metal structures / 72.80.Le – Polymers; organic compounds (including organic semiconductors)
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