Metallic behavior of GaAs/BaTiO3 heterostructure
1 Department of Physics, China University of Mining and Technology - Xuzhou 221116, China
2 Laboratory of Solid State Microstructures and School of Physics, Nanjing University - Nanjing 210093, China
Received: 23 March 2016
Accepted: 15 July 2016
The integration of III-V semiconductors on functional perovskite-oxide can lead to new material properties and new device applications by combining the rich properties of perovskite-oxides together with the superior optical and electronic properties of III-V semiconductors. The structural and electronic properties of the surface and interface of the GaAs/BaTiO3 are studied using first-principles calculations. We point out the energetically favorable GaAs/BaTiO3 interfaces according to the GaAs initial adsorption on the BaTiO3(001) substrate. Our calculations predict the existence of the metallic behavior at the GaAs/BaTiO3 interfaces.
PACS: 68.35.bg – Semiconductors / 68.35.-p – Solid surfaces and solid-solid interfaces: structure and energetics / 68.47.Gh – Oxide surfaces
© EPLA, 2016