Investigation of polycrystalline ferroelectric tunnel junction
School of Materials Science and Engineering, School of Materials Science and Engineering Hunan Xiangtan 411105, China, Hunan Provincial National Defense Key Laboratory of Key Film Materials & Application for Equipment, Xiangtan University - Hunan Xiangtan 411105, China and Key Laboratory of Low-dimensional Materials and Application Technology, Xiangtan University Hunan Xiangtan 411105, China
Received: 21 June 2016
Accepted: 30 July 2016
Ferroelectric tunnel junction (FTJ) is a breakthrough for addressing the nondestructive read in the ferroelectric random access memories. However, FTJs with nearly ideal characteristics have only been demonstrated on perovskite heterostructures that are deposited on closely lattice-matched and non-silicon substrates, or silicon substrates with epitaxial multilayer. In order to promote the application of FTJs, we develop a polycrystalline FTJ with ultrathin bottom electrode, in which the resistance variations exceed two orders of magnitude. And we achieve two stable logic states written and read easily using voltage pulses. Especially the device integrates with the silicon technology in modern microelectronics. Our results suggest new opportunities for ferroelectrics as nonvolatile resistive switching memory.
PACS: 68.37.-d – Microscopy of surfaces, interfaces, and thin films / 73.50.-h – Electronic transport phenomena in thin films / 73.23.-b – Electronic transport in mesoscopic systems
© EPLA, 2016