X-ray diffraction study of the stacking faults in hexagonal C70 single crystals
Institute of Crystallography, University of Lausanne BSP, CH-1015 Lausanne,
2 Laboratory of Crystallography, University of Bern Freiestrasse 3, CH-3012 Bern, Switzerland
Accepted: 6 December 1995
Pure crystallizes in close-packed crystal structures. Both the hexagonal close packing (h.c.p.) and the cubic close packing (c.c.p.) are known to exist. X-ray diffraction from single crystals with hexagonal habitus shows rods of diffuse intensity typical of stacking faults. The intensities of three of these rods were measured at room temperature with synchrotron radiation, and interpreted with a growth fault model assuming a depth of interaction of three layers. The result indicates the presence of both h.c.p. and c.c.p. domains, the former containing fewer stacking faults than the latter. The probability to find an stack of three layers ( e.g., ABA) anywhere in the crystal is only about 60%.
PACS: 61.72.Dd – Experimental determination of defects by diffraction and scattering / 61.72.Nn – Stacking faults and other planar or extended defects / 61.66.Bi – Elemental solids
© EDP Sciences, 1996