Issue Europhys. Lett. Volume 55, Number 4, August 2001 Page(s) 566 - 572 Section Condensed matter: electronic structure, electrical, magnetic, and optical properties DOI 10.1209/epl/i2001-00453-y

DOI: 10.1209/epl/i2001-00453-y


Europhys. Lett., 55 (4) , pp. 566-572 (2001)

Spin diffusion in doped semiconductors: The role of Coulomb interactions

I. D'Amico¹ and G. Vignale<sup>2

1</sup>  Institute for Scientific Interchange (ISI) Viale Settimio Severo 65, 10133 Torino, Italy
²  Department of Physics, University of Missouri Columbia, MO 65211, USA

(Received 5 March 2001; accepted 5 June 2001)

Abstract
We examine the effect of Coulomb interaction on the mobility and diffusion of spin packets in doped semiconductors. We find that the diffusion constant is reduced, relative to its non-interacting value, by the combined effect of Coulomb-enhanced spin susceptibility and spin Coulomb drag. In ferromagnetic semiconductors, the spin diffusion constant vanishes at the ferromagnetic transition temperature.

PACS
75.50.Pp - Magnetic semiconductors.
75.40.Gb - Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.).
78.47.+p - Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter.


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