EPL

Issue		Europhys. Lett. Volume 61, Number 4, February 2003
Page(s)		499 - 505
Section		Condensed matter: structure, mechanical and thermal properties
DOI		10.1209/epl/i2003-00157-x

DOI: 10.1209/epl/i2003-00157-x
Europhys. Lett., 61 (4) , pp. 499-505 (2003)

Hot-hole effects in a dilute two-dimensional gas in $\chem{SiGe}$

R. Leturcq¹, D. L'Hôte¹, R. Tourbot¹, V. Senz², U. Gennser³, T. Ihn², K. Ensslin², G. Dehlinger⁴ and D. Grützmacher⁴

¹ DSM/Service de Physique de l'Etat Condensé, CEA-Saclay 91191 Gif-sur-Yvette Cedex, France
² Laboratory of Solid State Physics, ETH Zürich - CH-8093 Zürich, Switzerland
³ Laboratoire de Photonique et de Nanostructures, CNRS - 91460 Marcoussis, France
⁴ Paul Scherrer Institut - CH-5232 Villigen PSI, Switzerland

(Received 5 July 2002; accepted in final form 10 December 2002)

Abstract
We study the resistivity vs. electric-field dependence $\rho(E)$ of a dilute two-dimensional hole (h) system in $\chem{SiGe}$ , on both sides of the crossover from weak to strong localization at B=0. Using $\rho$ as a "thermometer" to obtain the effective temperature of the holes $T_{\ab{e}}(E)$ , we find that $\rho(E)$ can be attributed to hole heating. In spite of the strong localization and h-h interactions, the power loss does not indicate any deviation from the density and temperature dependences predicted assuming independent and delocalized electrons. The consequences of these results on the h-h interaction assisted hopping, glassy behaviour and E-field scaling are developed. The hole-phonon coupling involves a limited screening, a deformation potential compatible with measurements at larger densities and temperatures, and a piezoelectric component which is definitely probed.

PACS
63.20.Kr - Phonon-electron and phonon-phonon interactions.
73.20.Fz - Weak or Anderson localization.
71.27.+a - Strongly correlated electron systems; heavy fermions.

© EDP Sciences 2003

What is OpenURL?