Issue Europhys. Lett. Volume 66, Number 1, April 2004 Page(s) 14 - 20 Section General DOI 10.1209/epl/i2003-10143-x

Europhys. Lett., 66 (1) , pp. 14-20 (2004)
DOI: 10.1209/epl/i2003-10143-x

Spin-based quantum gating with semiconductor quantum dots by bichromatic radiation method

M. Feng^{1, 2}, I. D'Amico¹, P. Zanardi¹ and F. Rossi<sup>1, 3

1</sup>  Institute for Scientific Interchange (ISI) Foundation, Villa Gualino Viale Settimio Severo 65, I-10133, Torino, Italy
²  Laboratory of Magnetic Resonance and Atomic and Molecular Physics Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences Wuhan, 430071, PRC
³  Dipartimento di Fisica, Politecnico di Torino Corso Duca degli Abruzzi 24, I-10129 Torino, Italy

(Received 22 July 2003; accepted in final form 29 January 2004)

Abstract
A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers, radiating two neighboring QDs, and tuned to blue detuning with respect to the resonant frequencies of individual excitons. The two-qubit phase gate can be achieved by means of both Pauli-blocking effect and dipole-dipole coupling between intermediate excitonic states.

PACS
03.67.-a - Quantum information.
32.80.Lg - Mechanical effects of light on atoms, molecules, and ions.
42.50.-p - Quantum optics.

© EDP Sciences 2004

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