Europhys. Lett, 33 (3), pp. 205-210 (1996)
X-ray diffraction study of the stacking faults in hexagonal
single crystals
E. Blanc
, H.-B. Bürgi
, R.
Restori
, D. Schwarzenbach
and Ph. Ochsenbein 
Institute of Crystallography, University of Lausanne
BSP, CH-1015 Lausanne,
Switzerland
Laboratory of Crystallography, University of Bern
Freiestrasse 3,
CH-3012 Bern, Switzerland
(received 31 July 1995; accepted 6 December 1995)
PACS. 61.72Dd - Experimental determination of defects by diffraction
and scattering.
PACS. 61.72Nn - Stacking faults and other planar or extended defects.
PACS. 61.66Bi - Elemental solids.
Abstract:
Pure
crystallizes in close-packed crystal structures. Both the
hexagonal close packing (h.c.p.) and the cubic close packing (c.c.p.) are
known to exist. X-ray diffraction from single crystals with hexagonal
habitus shows rods of diffuse intensity typical of stacking faults. The
intensities of three of these rods were measured at room temperature with
synchrotron radiation, and interpreted with a growth fault model assuming a
depth of interaction of three layers. The result indicates the presence of
both h.c.p. and c.c.p. domains, the former containing fewer stacking faults
than the latter. The probability to find an h-stack of three layers (
e.g., ABA) anywhere in the crystal is only about 60%.
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