Europhys. Lett., 57 (6) , pp. 872-878 (2002)
Effect of annealing on electron dephasing in three-dimensional polycrystalline metalsJ. J. Lin1, Y. L. Zhong2 and T. J. Li3
1 Institute of Physics, National Chiao Tung University Hsinchu 300, Taiwan, ROC
2 Department of Physics, National Tsing Hua University Hsinchu 300, Taiwan, ROC
3 Department of Electrophysics, National Chiao Tung University Hsinchu 300, Taiwan, ROC
(Received 30 July 2001; accepted in final form 19 December 2001)
We have studied the effect of thermal annealing on electron dephasing times in three-dimensional polycrystalline metals. Measurements are performed on as-sputtered and annealed AuPd and Sb thick films, using the weak-localization method. In all samples, we find that possesses an extremely weak temperature dependence as . Our results show that the effect of annealing is non-universal, and it depends strongly on the amount of disorder quenched in the microstructures during deposition. The observed "saturation" behavior of cannot be easily explained by magnetic scattering. We suggest that the issue of saturation can be better addressed in three-dimensional, rather than lower-dimensional, structures.
73.23.-b - Electronic transport in mesoscopic systems.
73.20.Fz - Weak or Anderson localization.
© EDP Sciences 2002