Electronic properties of g-GaN/MoS₂ van der Waals heterostructure by biaxial strain and interlayer distance

¹ Nanophotonics and Biophotonics Key Laboratory of Jilin Province, School of Physics, Changchun University of Science and Technology - Changchun 130022, China
² College of Physics and Electronic Information, Baicheng Normal University - Baicheng, Jilin 137000, China

Received: 6 August 2025
Accepted: 13 February 2026

Abstract

Inspired by the unique features of two-dimensional materials, herein, we mainly focus on exploring the g-GaN/MoS₂ heterostructure by stacking engineering. The g-GaN/MoS₂ heterostructure induces interlayer polarization, regulates the electronic properties of photoexcited carriers and significantly suppresses the exciton recombination. The suitable band edge position and appropriate ability of carrier separation as well as transfer render it the candidate for photocatalytic water splitting. Especially, it is effective to tune the related properties including band structures, dipole moment, surface potential difference, dipole-induced built-in electric field and absorption as well as photocatalytic activity via interlayer distance and biaxial strain. Our work might provide the guidance for further designing brand novel photocatalytic two-dimensional materials with distinguished optical absorption and efficient carrier separation.