Simulation study of SiH4 microdischarges in a narrow channel

L. Z. Tong; S. Yonemura; H. Takana; H. Nishiyama

doi:10.1209/0295-5075/77/45003

All issues

Volume 77 / No 4 (February 2007)

EPL, 77 4 (2007) 45003

Abstract

Issue		EPL Volume 77, Number 4, February 2007


Article Number		45003
Number of page(s)		5
Section		Physics of Gases, Plasmas and Electric Discharges
DOI		https://doi.org/10.1209/0295-5075/77/45003
Published online		02 February 2007

EPL, 77 (2007) 45003

Simulation study of SiH₄ microdischarges in a narrow channel

L. Z. Tong, S. Yonemura, H. Takana and H. Nishiyama

Institute of Fluid Science, Tohoku University - 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Corresponding author: nishiyama@ifs.tohoku.ac.jp

Received: 2 August 2006
Accepted: 14 December 2006

Abstract

Using the Particle-in-Cell/Monte Carlo (PIC/MC) method, the behavior of SiH₄ plasma discharge in a narrow channel was studied. Simulations were carried out at a gas pressure of 5 Torr for an electrode distance of 20 mm and a narrow channel with an inner diameter of 2 mm. Most SiH $_{2}^{+}$ ions were found to be changed into SiH $_{3}^{+}$ ions due to SiH $_{2}^{+}$ -SiH₄ collisional charge exchange. The dominant charged species in the discharge were electrons and SiH $_{3}^{+}$ ions. The inner surface of the narrow channel greatly affected SiH₄ plasma behavior due to an accumulation of charged particles. An intense ionization rate was found for the first time in the sheath on the inner surface of the narrow channel. The largest electron and SiH $_{3}^{+}$ ion densities appeared at the edge of the plasma bulk abutting the sheath on the inner surface of the narrow channel.

PACS: 52.40.Hf – Plasma-material interactions; boundary layer effects / 81.15.Gh – Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

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