Volume 77, Number 4, February 2007
|Number of page(s)||5|
|Section||Physics of Gases, Plasmas and Electric Discharges|
|Published online||02 February 2007|
Simulation study of SiH4 microdischarges in a narrow channel
Institute of Fluid Science, Tohoku University - 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Corresponding author: email@example.com
Accepted: 14 December 2006
Using the Particle-in-Cell/Monte Carlo (PIC/MC) method, the behavior of SiH4 plasma discharge in a narrow channel was studied. Simulations were carried out at a gas pressure of 5 Torr for an electrode distance of 20 mm and a narrow channel with an inner diameter of 2 mm. Most SiH ions were found to be changed into SiH ions due to SiH-SiH4 collisional charge exchange. The dominant charged species in the discharge were electrons and SiH ions. The inner surface of the narrow channel greatly affected SiH4 plasma behavior due to an accumulation of charged particles. An intense ionization rate was found for the first time in the sheath on the inner surface of the narrow channel. The largest electron and SiH ion densities appeared at the edge of the plasma bulk abutting the sheath on the inner surface of the narrow channel.
PACS: 52.40.Hf – Plasma-material interactions; boundary layer effects / 81.15.Gh – Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
© Europhysics Letters Association, 2007
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