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Polar ZnO thin-film nonvolatile transistors with (Bi, Nd)₄Ti₃O₁₂ gate insulators

Q. H. Tan, J. B. Wang, X. L. Zhong, Q. J. Wang, Y. Zhang and Y. C. Zhou

EPL, 97 5 (2012) 57012

DOI: https://doi.org/10.1209/0295-5075/97/57012

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