Diffusion process of metals in silica during ion irradiation
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, IN2P3-CNRS,
Bâtiment 108, F-91405 Orsay Campus, France
Accepted: 4 August 1997
The mixing mechanism of thin layers of Au, Pt or W embedded in silica when irradiated with 4.5 MeV Au ions was studied as a function of the ion fluence ϕ, temperature T and layer thickness d. Analysis of the diffusion process by means of Rutherford backscattering spectrometry showed that the spreading of metal peaks was anisotropic and that their variance varied as ϕ at room temperature or at 100 K. This behavior is attributed to an association of metal atoms with diffusing defects.
PACS: 61.80.Jh – Ion radiation effects / 81.05.Ys – Nanophase materials / 66.30.-h – Diffusion in solids
© EDP Sciences, 1997