In-plane atomic ordering in GaAs/AlAs lateral superlattices grown on vicinal surfaces
Laboratoire de Microstructures et de Microélectronique
L2M , CNRS, B.P. 107, 196 Avenue Henri Ravera, 92225 Bagneux Cedex,
Accepted: 11 September 1997
The amplitude of the 1D periodic potential modulation in GaAs/AlAs lateral superlattices (with 10% mean Al content) obtained by organized epitaxy on GaAs (001) vicinal surfaces is only ~ 0.1 of that expected for perfect lateral atomic ordering. We show that this reduction, deduced optically from the spectral shift due to the modulation, is well explained as the product of a factor 0.41 due to the intrinsic step array disorder of the surface by a factor 0.28 due to the vertical Ga/Al atomic exchange during the growth.
PACS: 78.66.-w – Optical properties of specific thin films, surfaces, and low-dimensional structures: superlattices, quantum well structures, multilayers, and microparticles / 78.55.Cr – III-V semiconductors / 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy
© EDP Sciences, 1997