Interface states in junctions of two semiconductors with intersecting dispersion curves
Bereich Theoretische Physik, Hahn-Meitner-Institut Berlin - D-14091 Berlin, Germany
2 Tamm Theoretical Department of the Lebedev Physical Institute, RAS, Leninskii pr. 53, 117924, Moscow, Russia
Accepted: 23 June 1998
A novel type of shallow interface state in junctions of two semiconductors without band inversion is identified within the envelope function approximation, using the two-band model. It occurs in abrupt junctions when the interband velocity matrix elements of the two semiconductors differ and the bulk dispersion curves intersect. The in-plane dispersion of the interface state is found to be confined to a finite range of momenta centered around the point of intersection. These states turn out to exist also in graded junctions, with essentially the same properties as in the abrupt case.
PACS: 73.20.-r – Surface and interface electron states / 73.20.Fz – Weak localization effects (e.g., quantized states) / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
© EDP Sciences, 1998