Structural and binding properties of vacancy clusters in silicon
Istituto Nazionale per la Fisica della Materia, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano, via Emanueli 15, I-20126 Milano, Italy
2 Lawrence Livermore National Laboratory - Livermore, CA 94550, USA
Accepted: 23 July 1998
By means of large-scale quantum simulations we investigate the formation and binding of vacancy clusters Vn in silicon for . We show that different growth patterns exist and that an interplay between energy and topology arguments determines the most stable aggregates.
PACS: 61.72.Qq – Microscopic defects (voids, inclusions, etc.) / 61.80.Az – Theory and models of radiation effects / 82.20.Wt – Computational modeling; simulation
© EDP Sciences, 1998