Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy
LEMI UPRES - EA. 2654 - IUT Université de Rouen
rue Lavoisier, 76821 Mont Saint Aignan, France
Accepted: 25 November 1998
The redistribution of the p-type dopant Be during the post-growth rapid thermal annealing in InGaAs layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry technique. The experimental structures consisted of a 2000 Å Be-doped () layer sandwiched between 5000 Åundoped layers. To explain the observed depth profiles, obtained for annealing cycles with time durations of 10 to 240 s and temperatures in the range of 700-, two models of kick-out mechanism, with neutral and singly positively ionized Be interstitial species, have been considered.
PACS: 66.30.Jt – Diffusion of impurities / 71.55.Eq – III-V semiconductors / 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy
© EDP Sciences, 1999