Europhys. Lett, 47 (2), pp. 203-207 (1999)
Location of fission products in zirconia single crystals
L. Thomé 1, J. Jagielski 2 and F. Garrido 1
1 Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse,
Bât. 108, 91405 Orsay, France
2 Institute of Electronic Materials Technology - Wolczynska 133, 01-919 Warsaw, Poland
The Andrzej Soltan Institute of Nuclear Studies - 05-400 Swierk, Poland
(received 5 February 1999; accepted in final form 17 May 1999)
PACS. 61.72Vv - Doping and impurity implantation in
III-V and II-VI semiconductors.
PACS. 61.80Jh - Ion radiation effects.
PACS. 61.85 - Channeling phenomena (blocking, energy loss, etc.).
The lattice location of specific fission products (Cs and I) in zirconia single crystals was investigated by using Rutherford backscattering and channeling experiments. The fission products were introduced into the matrix up to a concentration of a few at.% by ion implantation. The single crystals are strongly damaged during the implantation process, and the damage creation is almost the same for Cs or I ion implantation. The location of the implanted fission products inside the host matrix depends on the nature of the impurity. A significant substitutional fraction is observed in the case of Cs ions at low concentration, whereas I ions mainly occupy random sites. These different site occupancies are likely correlated to specific impurity-defect interactions or phase formation which can affect the transport mechanisms of fission products in the confinement matrix.
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