Europhys. Lett, 47 (2), pp. 260-266 (1999)
Nanometer size determination of type-II domains in CuPt-ordered with high-pressure magneto-luminescence
J. Zeman 1, S. Jullian 1, G. Martinez 1, P. Y. Yu 2 and K. Uchida 3
1 Grenoble High Magnetic Field Laboratory MPI-FKF/CNRS
25, Av. des Martyrs, BP 166, 38042 Grenoble Cedex 9, France
2 Department of Physics, University of California at Berkeley and
Materials Science Division, Lawrence Berkeley National Laboratory
Berkeley, CA 94720, USA
3 Department of Communications and Systems
The University of Electro-Communications
1-5-1 Choufugaoka Choufu, Tokyo 182, Japan
(received 3 May 1999; accepted 7 May 1999)
PACS. 78.66Fd - III-V semiconductors.
PACS. 78.55 - Photoluminescence.
PACS. 73.40Kp - III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.
Photoluminescence originating from the GaAs/(ordered)interface has been studied under the simultaneous application of high magnetic field and high pressure. A sharp threshold dependence on magnetic field was observed in the intensity of the spatially indirect transition between electrons in and holes in GaAs. A model involving trapping of electrons from GaAs into "quantum boxes'' formed by type-II ordered GaInP2 domains is proposed. This model reproduces the pressure-induced variations of the quantum box sizes and demonstrates the ability of this technique to study the properties of nanometer size systems.
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