Europhys. Lett.
Volume 47, Number 2, July 1999
Page(s) 260 - 266
Section Condensed matter: electronic structure, electrical, magnetic and optical properties
Published online 01 September 2002
DOI: 10.1209/epl/i1999-00381-x

Europhys. Lett, 47 (2), pp. 260-266 (1999)

Nanometer size determination of type-II domains in CuPt-ordered $\rm GaInP_2$ with high-pressure magneto-luminescence

J. Zeman 1, S. Jullian 1, G. Martinez 1, P. Y. Yu 2 and K. Uchida 3

1 Grenoble High Magnetic Field Laboratory MPI-FKF/CNRS
25, Av. des Martyrs, BP 166, 38042 Grenoble Cedex 9, France
2 Department of Physics, University of California at Berkeley and
Materials Science Division, Lawrence Berkeley National Laboratory
Berkeley, CA 94720, USA
3 Department of Communications and Systems
The University of Electro-Communications
1-5-1 Choufugaoka Choufu, Tokyo 182, Japan

(received 3 May 1999; accepted 7 May 1999)

PACS. 78.66Fd - III-V semiconductors.
PACS. 78.55${\rm -m}$ - Photoluminescence.
PACS. 73.40Kp - III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.


Photoluminescence originating from the GaAs/(ordered)$\rm GaInP_2$interface has been studied under the simultaneous application of high magnetic field and high pressure. A sharp threshold dependence on magnetic field was observed in the intensity of the spatially indirect transition between electrons in $\rm GaInP_2$ and holes in GaAs. A model involving trapping of electrons from GaAs into "quantum boxes'' formed by type-II ordered GaInP2 domains is proposed. This model reproduces the pressure-induced variations of the quantum box sizes and demonstrates the ability of this technique to study the properties of nanometer size systems.


Copyright EDP Sciences