Europhys. Lett.
Volume 61, Number 2, January 2003
Page(s) 235 - 241
Section Condensed matter: electronic structure, electrical, magnetic, and optical properties
Published online 01 January 2003
DOI: 10.1209/epl/i2003-00224-x
Europhys. Lett., 61 (2) , pp. 235-241 (2003)

On the nature of ferromagnetism in diluted magnetic semiconductors: $\chem{GaAs:Mn}$

P. M. Krstajic1, V. A. Ivanov1, 2, F. M. Peeters1, V. Fleurov3 and K. Kikoin4

1  Departement Natuurkunde, Universiteit Antwerpen (UIA) Universiteitsplein 1, B-2610 Antwerpen, Belgium
2  N. S. Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences - Leninskii prospekt 31 117 907 Moscow, Russia
3  School of Physics and Astronomy, Tel Aviv University Ramat Aviv, 69 978 Tel Aviv, Israel
4  Physics Department, Ben-Gurion University 84 105 Beer-Sheva, Israel

(Received 25 June 2002; accepted in final form 29 October 2002)

An energy level diagram is constructed on the basis of a microscopic Hamiltonian proposed for a description of interacting manganese impurities in diluted magnetic semiconductors (DMS). It is shown that ferromagnetism in p-type III-V DMS is governed by the strong hybridization of $\chem{Mn^{2+}}$-electrons with the mobile holes and localized states near the top of the valence band. The Curie temperature estimated from the proposed kinematic exchange agrees with the experiments on $\chem{GaAs:Mn}$. The model is also applicable to the $\chem{GaP:Mn}$ system.

71.27.+a - Strongly correlated electron systems; heavy fermions.
75.30.Hx - Magnetic impurity interactions.
75.50.Pp - Magnetic semiconductors.

© EDP Sciences 2003