Europhys. Lett., 63 (1) , pp. 14-20 (2003)
Simulation of wetting-layer and island formation in heteroepitaxial growthF. Much and M. Biehl
Sonderforschungsbereich 410, Institut für Theoretische Physik Julius-Maximilians-Universität Würzburg - Am Hubland, 97074 Würzburg, Germany firstname.lastname@example.org
(Received 28 January 2003; accepted in final form 5 May 2003)
We investigate various phenomena of strained heteroepitaxial growth. To this end, we study a model in 1+1 dimension by means of off-lattice kinetic Monte Carlo simulations. We observe the appearance of strain-induced mounds upon a wetting layer, i.e. Stranski-Krastanov growth. The transition from 2d to 3d islands occurs at a critical layer thickness and its dependence on the growth parameters is studied quantitatively. We find that for large enough deposition rates the layer thickness as well as the size and density of islands depend on the misfit between substrate and adsorbate, only.
07.05.Tp - Computer modeling and simulation.
68.55.Ac - Nucleation and growth: microscopic aspects.
81.10.Aj - Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation.
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