Europhys. Lett.
Volume 63, Number 6, September 2003
Page(s) 888 - 894
Section Condensed matter: electronic structure, electrical, magnetic, and optical properties
Published online 01 November 2003
DOI: 10.1209/epl/i2003-00597-2
Europhys. Lett., 63 (6) , pp. 888-894 (2003)

Electron interaction with domain walls in antiferromagnetically coupled multilayers

F. G. Aliev1, R. Schad2, A. Volodin3, K. Temst3, C. Van Haesendonck3, Y. Bruynseraede3, I. Vavra4, V. K. Dugaev5 and R. Villar1

1  Departamento de Física de la Materia Condensada, C-III Universidad Autónoma de Madrid - Madrid, Spain
2  CMIT, University of Alabama - Tuscaloosa, AL 35487, USA
3  Laboratorium voor vaste Stofffysica en Magnetisme, K.U. Leuven B-3001 Leuven, Belgium
4  Institute of Electrical Engineering-SAS - 84239 Bratislava, Slovakia
5  Max-Planck-Institut für Mikrostrukturphysik - Weinberg 2, 06120 Halle, Germany

(Received 2 May 2003; accepted 4 July 2003)

For antiferromagnetically coupled $\chem{Fe/Cr}$ multilayers the low-field contribution to the resistivity $\rho_{\ab{DW}}$, which is caused by the domain walls, is strongly enhanced at low temperatures. The low-temperature resistivity $\rho_{\ab{DW}}$ varies according to a power law, $\rho_{\ab{DW}}(T)=\rho_{\ab{DW}}(0)-A\cdot T^\alpha$ with the exponent $\alpha \simeq 0.7$-1. This behavior cannot be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the non-uniform gauge fields caused by the domain walls.

75.60.-d - Domain effects, magnetization curves, and hysteresis.
75.70.-i - Magnetic properties of thin films, surfaces, and interfaces.
75.47.De - Giant magnetoresistance.

© EDP Sciences 2003