Magnetic interlayer coupling across semiconducting layersU. Rücker1, S. O. Demokritov2, J. Nassar3 and P. Grünberg1
1 Institut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich, Germany
2 Fachbereich Physik, Technische Universität Kaiserslautern Erwin-Schrödinger-Straße, 67653 Kaiserslautern, Germany
3 UMR CNRS-Thomson CSF - 91404 Orsay, France
(Received 20 November 2003; accepted in final form 26 March 2004)
Ferromagnetic interlayer coupling through a semiconducting spacer has been studied in epitaxial layered structures . The coupling strength has been determined as a function of temperature and interlayer thickness using magneto-optical Kerr effect magnetometry. A strong rise of the coupling strength with increasing temperature has been observed in the temperature range, where is paramagnetic. The observations match the theoretical description of interlayer exchange coupling between two metallic layers mediated by the electronic states in a semiconductor. Near the Curie temperature of , long-range ferromagnetic coupling is observed, that is related to ferromagnetic order inside the layer.
75.70.Ak - Magnetic properties of monolayers and thin films.
73.40.Sx - Metal-semiconductor-metal structures.
75.70.Cn - Magnetic properties of interfaces (multilayers, superlattices, heterostructures).
© EDP Sciences 2004