Europhys. Lett.
Volume 66, Number 6, June 2004
Page(s) 868 - 873
Section Condensed matter: electronic structure, electrical, magnetic, and optical properties
Published online 01 June 2004
Europhys. Lett., 66 (6) , pp. 868-873 (2004)
DOI: 10.1209/epl/i2004-10032-x

Effects of magnetic field on the manganite-based trilayer junction

J. R. Sun1, C. M. Xiong1, Y. F. Chen1, B. G. Shen1 and L. Kang2

1  State Key Laboratory for Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences Beijing 100080, PRC
2  Department of Electronic Science and Engineering, Nanjing University Nanjing 210093, Jiangsu, PRC

(Received 29 January 2004; accepted 15 April 2004)

A heterojunction has been fabricated by growing a $\chem{La_{0.29}Pr_{0.38}Ca_{0.33}Mn}$- $\chem{O_3}$ (LPCM) film on an $\chem{AlN}$ buffer layer above the 0.5 $\un{wt}$% $\chem{Nb}$-doped $\chem{SrTiO_3}$ substrate, and its behavior under magnetic field is studied. The magnetic field greatly affects the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance (MR). The MR is asymmetric with respect to the direction of the current, and can be either positive or negative, depending on temperature and bias current. A change of the band structure of LPCM under external field may be responsible for these observations.

75.47.Gk - Colossal magnetoresistance.
73.50.-h - Electronic transport phenomena in thin films.
73.40.Lq - Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions.

© EDP Sciences 2004