Europhys. Lett.
Volume 67, Number 2, July 2004
Page(s) 247 - 253
Section Interdisciplinary physics and related areas of science and technology
Published online 01 July 2004
Europhys. Lett., 67 (2) , pp. 247-253 (2004)
DOI: 10.1209/epl/i2003-10281-1

Dependence of the hydrogen spin dynamics on the conductivity type in $\chem{CdTe}$ as evidenced by its muonium analogue

V. Corregidor1, D. Martín y Marero2, J. M. Gil3 and E. Diéguez1

1  Departamento de Física de Materiales, Universidad Autónoma de Madrid 28049 Madrid, Spain
2  Institut Laue-Langevin - 6 rue Jules Horowitz, 38042 Grenoble, France and Instituto de Ciencia de Materiales de Aragón, CSIC - Zaragoza, Spain
3  Departamento de Física, Universidade de Coimbra - P-3004-516 Coimbra, Portugal

(Received 2 September 2003; accepted in final form 30 April 2004)

Isolated hydrogen in p- and n-type $\chem{CdTe}$ was studied by muon spin polarization using muonium as light analogue. Transverse field spectra as a function of temperature were collected and analysed taking into account the muonium ionisation state. Evidence is presented showing that the dynamics of the hydrogen electronic spin depends on the conductivity type ( p or n) of the semiconductor and that $\mu$SR is sensitive to the presence of shallow donors in $\chem{CdTe}$. On the other hand, the probability of formation of deep states or the electronic structure of shallow donors is not influenced by the type of conductivity.

72.80.Ey - III-V and II-VI semiconductors.
76.75.+i - Muon spin rotation and relaxation.
72.20.Dp - General theory, scattering mechanisms.

© EDP Sciences 2004