Europhys. Lett.
Volume 71, Number 3, August 2005
Page(s) 459 - 465
Section Condensed matter: electronic structure, electrical, magnetic, and optical properties
Published online 13 July 2005
Europhys. Lett., 71 (3), pp. 459-465 (2005)
DOI: 10.1209/epl/i2005-10099-9

Phonon coherence and new set of sidebands in phonon-assisted photoluminescence

S.-J. Xiong1, 2 and S.-J. Xu2

1  National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University - Nanjing 210093, PRC
2  Department of Physics and HKU-CAS Joint Laboratory on New Materials The University of Hong Kong - Pokfulam Road, Hong Kong, PRC

received 25 January 2005; accepted in final form 7 June 2005
published online 13 July 2005

We investigate excitonic polaron states comprising a local exciton and phonons in the longitudinal optical (LO) mode by solving the Schrödinger equation. We derive an exact expression for the ground state (GS), which includes multi-phonon components with coefficients satisfying the Huang-Rhys factors. The recombination of GS and excited polaron states gives one set of sidebands in photoluminescence (PL): the multi-phonon components in the GS produce the Stokes lines and the zero-phonon components in the excited states produce the anti-Stokes lines. By introducing the mixing of the LO mode and environal phonon modes, the exciton will also couple with the latter, and the resultant polaron states result in another set of phonon sidebands. This set has a zero-phonon line higher and wider than that of the first set due to the tremendous number of the environal modes. The energy spacing between the zero-phonon lines of the first and second sets is proved to be the binding energy of the GS state. The common exciton origin of these two sets can be further verified by a characteristic Fano lineshape induced by the coherence in the mixing of the LO and the environal modes.

78.20.Bh - Theory, models, and numerical simulation.
42.50.Ct - Quantum description of interaction of light and matter; related experiments.
78.55.Et - II-VI semiconductors.

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