Europhys. Lett.
Volume 71, Number 4, August 2005
Page(s) 524 - 529
Section General
Published online 13 July 2005
Europhys. Lett., 71 (4), pp. 524-529 (2005)
DOI: 10.1209/epl/i2005-10117-0

Implementing controlled-NOT gate based on free spin qubits with semiconductor quantum-dot array

Yin-Zhong Wu1 and Wei-Min Zhang2

1  Department of Physics, Changshu Institute of Technology - Changshu 215500, PRC
2  Center for Quantum Information Science, National Cheng Kung University Tainan 70101, Taiwan

received 10 February 2005; accepted in final form 17 June 2005
published online 13 July 2005

Based on electron spins in semiconductor quantum dots as qubits, a new quantum controlled-NOT (CNOT) gate is constructed in solid nanostructure without resorting to spin-spin interactions. Single-electron tunneling technology and coherent quantum-dot cellular-automaton architecture are used to generate an ancillary charge entangled state. Using the ancillary charge entangled state as an intermediate state, we obtain a spin entangled state and design a CNOT gate by using only single-spin rotations.

03.67.Lx - Quantum computation.
73.63.-b - Electronic transport in nanoscale materials and structures.

© EDP Sciences 2005