Europhys. Lett.
Volume 71, Number 5, September 2005
Page(s) 757 - 762
Section Physics of gases, plasmas and electric discharges
Published online 29 July 2005
Europhys. Lett., 71 (5), pp. 757-762 (2005)
DOI: 10.1209/epl/i2004-10548-y

Enhanced diffusion of $\chem{Cu}$ in aluminium under low-energy ion bombardment

Z. Sternberg1 and M. Stupnisek2

1  Institute "Ruder Boskovic" - Zagreb, Croatia
2  Faculty of Mechanical Engineering and Naval Architecture - Zagreb, Croatia

received 29 November 2004; accepted in final form 10 June 2005
published online 29 July 2005

Sputter deposition of copper on aluminium, under intense bombardment of low-energy ions resulted in the formation of two interfacial zones. The mean diffusion coefficient effective in the formation of the first zone, $\le3 \times 10^{-10}$ $\un{cm^2/s}$, is attributed to vacancy supersaturation. The results strongly suggest that by supplying the necessary energy for the formation of vacancies, the activation energy for diffusion can be reduced to the level of the enthalpy of migration, provided lifetimes of freely migrating defects are sufficiently long.

52.40.Hf - Plasma-material interactions; boundary layer effects.
68.35.Fx - Diffusion; interface formation.

© EDP Sciences 2005