Effect of temperature and bias voltage on the conductance distribution of disordered quantum wiresV. A. Gopar1, 2 and P. Wölfle1
1 Institut für Theorie der Kondensierten Materie, Universität Karlsruhe Wolfgang-Gaedestr. 1, 76128 Karlsruhe, Germany
2 Max-Planck-Institut für Physik komplexer Systeme Nöthnitzer Strasse 38, 01187 Dresden, Germany
received 26 May 2005; accepted 12 July 2005
published online 10 August 2005
The statistical properties of the conductance of one-dimensional disordered systems are studied at finite bias voltage V and temperature T, in an independent-electron picture. We calculate the complete distribution of the conductance P(G) in different regimes of V, T within a statistical model of resonant tunneling transmission. We find that P(G) changes from the well-known log-normal distribution at T=0 in the linear response regime to a Gaussian distribution at large V, T. The dependence on T and V of average quantities such as , is analyzed as well. Our analytical results are confirmed by numerical simulations. We also discuss the limits of validity of the model and conclude that the effects of finite T, V presented here should be observable.
72.10.-d - Theory of electronic transport; scattering mechanisms.
73.23.-b - Electronic transport in mesoscopic systems.
© EDP Sciences 2005