Fluence effect on ion-implanted diffusion in relaxedP. Laitinen1, 2, J. Räisänen1, 2, I. Riihimäki3, J. Likonen4 and E. Vainonen-Ahlgren4
1 Accelerator Laboratory, University of Helsinki P.O. Box 43, FIN-00014 Helsinki, Finland
2 The ISOLDE Collaboration, CERN - CH-1211 Genève 23, Switzerland
3 Department of Physics, University of Jyväskylä P.O. Box 35, FIN-40351 Jyväskylä, Finland
4 VTT Processes - P.O. Box 1608, FIN-02044, Finland
received 9 June 2005; accepted in final form 13 September 2005
published online 7 October 2005
A systematic study on the fluence ( dependence of ion-implanted As diffusion in relaxed alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above a clear fluence-dependent enhancement in arsenic diffusion was noted for . In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of .
61.72.Tt - Doping and impurity implantation in germanium and silicon.
66.30.Jt - Diffusion of impurities.
© EDP Sciences 2005