Europhys. Lett.
Volume 72, Number 3, November 2005
Page(s) 416 - 422
Section Condensed matter: structural, mechanical and thermal properties
Published online 07 October 2005
Europhys. Lett., 72 (3), pp. 416-422 (2005)
DOI: 10.1209/epl/i2005-10257-1

Fluence effect on ion-implanted $\chem{As}$ diffusion in relaxed $\chem{SiGe}$

P. Laitinen1, 2, J. Räisänen1, 2, I. Riihimäki3, J. Likonen4 and E. Vainonen-Ahlgren4

1  Accelerator Laboratory, University of Helsinki P.O. Box 43, FIN-00014 Helsinki, Finland
2  The ISOLDE Collaboration, CERN - CH-1211 Genève 23, Switzerland
3  Department of Physics, University of Jyväskylä P.O. Box 35, FIN-40351 Jyväskylä, Finland
4  VTT Processes - P.O. Box 1608, FIN-02044, Finland

received 9 June 2005; accepted in final form 13 September 2005
published online 7 October 2005

A systematic study on the fluence ( $5\times 10^{8}\mbox{--}4 \times 10^{14}\un{cm^{-2}})$ dependence of ion-implanted As diffusion in relaxed ${\rm Si}_{1-x}{\rm Ge}_x$ alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above $4\times 10^{11}\un{cm^{-2}}$ a clear fluence-dependent enhancement in arsenic diffusion was noted for ${\rm Si}_{1-x}{\rm Ge}_x$. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of $\chem{SiGe}$.

61.72.Tt - Doping and impurity implantation in germanium and silicon.
66.30.Jt - Diffusion of impurities.

© EDP Sciences 2005