Novel approach to nonlinear susceptibility in semiconductorsM. Combescot1, O. Betbeder-Matibet1, K. Cho2 and H. Ajiki2
1 INSP, CNRS, Université Pierre et Marie Curie and Université Denis Diderot Campus Boucicaut - 140 rue de Lourmel, 75015 Paris, France
2 Graduate School of Engineering Science, Osaka University - Machikaneyama Toyonaka 560-8531, Japan
received 2 February 2005; accepted in final form 22 September 2005
published online 14 October 2005
We here propose a new procedure to derive a general expression of the third-order susceptibility valid for any semiconductor Hamiltonian. It relies on our theory for composite exciton many-body effects which is quite appropriate to this problem since all optical nonlinearities in semiconductors come from exchange scatterings with the virtual excitons coupled to photons. Our expression of is sample volume free, as physically expected. It also contains a Pauli term (exchange without Coulomb) which is missed by all bosonized exciton approaches. This term, dominant at large detuning, is a direct manifestation of the exciton composite nature.
71.35.-y - Excitons and related phenomena.
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