Spin-polarized hole transport through a diluted magnetic semiconductor heterostructure with magnetic-field modulationsK. Gnanasekar1 and K. Navaneethakrishnan2
1 The American College - Madurai-625 002, India
2 School of Physics, Madurai-Kamaraj University - Madurai-625 021, India
received 25 October 2005; accepted in final form 10 January 2006
published online 25 January 2006
We investigate the spin-polarized transport of holes in symmetric and asymmetric diluted magnetic semiconductor heterostructures of CdTe/Cd1-xMnxTe under local magnetic-field modulations. The effect of a type-I-to-type-II transition in the CdTe/Cd1-xMnxTe heterostructure is also used in our model. The spatially modulated magnetic field provides us with a new degree of freedom to control the degree of spin-polarized transport of holes. Our investigations show that spin-polarized transport of holes reaches 100% polarization with modulated weak magnetic field. This could be suitably engineered in the fabrication of perfect magnetic semiconductor spin-filters.
75.50.Pp - Magnetic semiconductors.
72.25.-b - Spin polarized transport.
73.40.Gk - Tunneling.
© EDP Sciences 2006