Solitary acoustoelectric microwave domain in piezoelectric semiconductorsJ. Szeftel1, P. Leroux-Hugon2 and G. X. Huang3
1 ENS Cachan, LPQM - 61 avenue du Président Wilson, 94235 Cachan, France
2 INSP, Campus Boucicaut - 140 rue de Lourmel, 75015 Paris, France
3 Department of Physics, East China Normal University - Shanghai 200062, PRC
received 18 October 2005; accepted in final form 11 January 2006
published online 25 January 2006
Negative differential conductivity stemming from piezoelectric coupling in semiconductors is shown to arouse a mm wide, high-amplitude acoustoelectric microwave packet moving at sound velocity. Because the electric permittivity is inferred to be renormalized to zero, all properties of this solution (but its width), including its vibrational frequency and amplitude, are shown to be shaped by the nonlinear piezoelectric interaction. An experiment is proposed to check the validity of this analysis. Possible implementation of an acoustoelectric generator is mentioned.
72.20.Ht - High-field and nonlinear effects.
72.50.+b - Acoustoelectric effects.
85.30.Fg - Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices).
© EDP Sciences 2006