Europhys. Lett.
Volume 76, Number 4, November 2006
Page(s) 657 - 663
Section Condensed matter: electronic structure, electrical, magnetic, and optical properties
Published online 13 October 2006
Europhys. Lett., 76 (4), pp. 657-663 (2006)
DOI: 10.1209/epl/i2006-10320-5

Electron transport through antidot superlattices in $\chem{Si/SiGe}$ heterostructures: New magnetoresistance resonances in lattices with a large aspect ratio of antidot diameter to lattice period

E. B. Olshanetsky1, V. T. Renard2, 3, Z. D. Kvon1, J. C. Portal2, 3, 4 and J. M. Hartmann5

1  Institute of Semiconductor Physics - Novosibirsk 630090, Russia
2  GHMFL, CNRS - BP 166, F-38042, Grenoble, Cedex 9, France
3  INSA - 135 Avenue de Rangueil, F-31077, Toulouse Cedex 4, France
4  Institut Universitaire de France - Toulouse, France
5  CEA/Leti - F-38054, Grenoble, Cedex 9, France

received 31 August 2006; accepted in final form 22 September 2006
published online 13 October 2006

In the present work we have investigated the transport properties in a number of $\chem{Si/SiGe}$ samples with square antidot lattices of different periods. In samples with lattice periods equal to 700$\un{nm}$ and 850$\un{nm}$ we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and $\chem{Si/SiGe}$ samples with antidot lattices. In samples with a 600$\un{nm}$ lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.

73.21.Cd - Superlattices.
73.23.Ad - Ballistic transport.

© EDP Sciences 2006