Structured porous silicon sub-micrometer wells grown by colloidal lithographyM. Manso Silván, M. Arroyo Hernández, V. Torres Costa, R. J. Martín Palma and J. M. Martínez Duart
Departamento de Física Aplicada C-XII, Universidad Autónoma de Madrid 28049 Madrid, Spain
received 11 August 2006; accepted 27 September 2006
published online 20 October 2006
Periodic porous silicon sub-micrometer wells embedded into a silicon matrix have been grown by a combination of colloidal lithography, plasma processing and electrochemical etching. The process relies on the formation of a self-assembled monolayer of polystyrene microspheres, which are etched in an Ar/O2 plasma. A polymer resist is subsequently deposited by plasma polymerization. Finally, after colloidal particle removal, the surface is electrochemically etched in HF to form the porous silicon wells.
85.40.Hp - Lithography, masks and pattern transfer.
81.05.Rm - Porous materials; granular materials.
81.05.Cy - Elemental semiconductors.
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