Europhys. Lett.
Volume 76, Number 4, November 2006
Page(s) 690 - 695
Section Interdisciplinary physics and related areas of science and technology
Published online 20 October 2006
Europhys. Lett., 76 (4), pp. 690-695 (2006)
DOI: 10.1209/epl/i2006-10331-2

Structured porous silicon sub-micrometer wells grown by colloidal lithography

M. Manso Silván, M. Arroyo Hernández, V. Torres Costa, R. J. Martín Palma and J. M. Martínez Duart

Departamento de Física Aplicada C-XII, Universidad Autónoma de Madrid 28049 Madrid, Spain

received 11 August 2006; accepted 27 September 2006
published online 20 October 2006

Periodic porous silicon sub-micrometer wells embedded into a silicon matrix have been grown by a combination of colloidal lithography, plasma processing and electrochemical etching. The process relies on the formation of a self-assembled monolayer of polystyrene microspheres, which are etched in an Ar/O2 plasma. A polymer resist is subsequently deposited by plasma polymerization. Finally, after colloidal particle removal, the surface is electrochemically etched in HF to form the porous silicon wells.

85.40.Hp - Lithography, masks and pattern transfer.
81.05.Rm - Porous materials; granular materials.
81.05.Cy - Elemental semiconductors.

© EDP Sciences 2006